Dr. Ibrahim Abuishmais

Journal :

• I. Abuishmais, F. R. Shahroury, and H. Ahmad, “A Design Methodology of High-Efficiency Dimmable Current Sink for Current-Regulated Drivers,” Electronics, vol. 11, no. 16, p. 2566, Aug. 2022, doi: 10.3390/electronics11162566.
• Shahroury, F.; Ahmad, H.; Abuishmais, I. Design Aspects of a Single-Output Multi-String WLED Driver Using 40 nm CMOS Technology. J. Low Power Electron. Appl. 2022, 12(1), 5; https://doi.org/10.3390/jlpea12010005.
• Ahmad, H.; Shahroury, F.; Abuishmais, I. A Multi-Output Multi-String High-Efficiency WLED Driver Using 40 nm CMOS Technology. J. Low Power Electron. Appl. 2021, 11(4), 47; https://doi.org/10.3390/jlpea11040047.
• Raya O. Jaradat, Fadi R. Shahroury, Hani H. Ahmad, I. Abuishmais, "Design Methodology For Narrow-Band Low Noise Amplifier Using CMOS 0.18 um Technology", Jordanian Journal of Computers and Information Technology (JJCIT) ,Volume 08, Number 01, pp. 98 - 111, March 2022, doi: 10.5455/jjcit.71-1637577305.
• Ibrahim Abuishmais and Tore M. Undeland, "SiC Devices for Renewable and High-Performance Power Conversion Applications," Journal of Advances in Power Electronics, vol. 2012, ISSSN: 2090-1828. Article ID 765619, 2012. doi:10.1155/2012/765619.

Conferences:  

• I. Abuishmais and F. R. Shahroury, "Bidirectional Dual Active Bridge for Interfacing Battery Energy Storage Systems with DC Microgrid," 2021 International Conference on Electrical, Computer and Energy Technologies (ICECET), 2021, pp. 1-5, doi: 10.1109/ICECET52533.2021.9698654.
• S Tiwari, I. Abuishmais, JK Langelid, R Lund, "Characterization of body diodes in the-state-of-the-art SiC FETs-Are they good enough as freewheeling diodes?", 20th European Conference on Power Electronics, 2018.
• OC. Spro, S. Basu, I. Abuishmais, OM. Midtgård, "Driving of a GaN enhancement mode HEMT transistor with Zener diode protection for high efficiency and low EMI," 19th European Conference on Power Electronics, 2017. 
• Abuishmais, Ibrahim; Basu, Supratim; Undeland, Tore Marvin. "On understanding and driving SiC power JFETs." Proceeding of International Applied Power Electronics Conference and Exposition (APEC), 2011 Twenty-Sixth Annual IEEE. IEEE Press 2011 ISBN 978-1-4244-8084-5. s. 1071-1075
• Abuishmais, Ibrahim; Undeland, Tore Marvin." Dynamic characterization of 63 mΩ, 1.2 kV, normally-off SiC VJFET." Power Electronics and ECCE Asia (ICPE & ECCE), 2011 IEEE 8th International Conference on. IEEE Press 2011 ISBN 9781-61284-958-4. pp. 1206-1210.
• Tiwari, Subhadra; Abuishmais, Ibrahim; Undeland, Tore Marvin; Bøysen, Kjetil. "Silicon Carbide Power Transistors for Photovoltaic Applications." In PowerTech 2011 Proceedings. IEEE conference proceedings, 2011 ISBN 978-1-42448417-1. pp. 1-6
• Abuishmais, Ibrahim., Basu, Supratim and Undeland, Tore Marvin. "On Driving SiC Power JFETs". Proceedings of the 14th International Power Electronics and Motion Control Conference, EPE-PEMC 2010. IEEE conference proceedings 2010 ISBN 978-1-4244-7854-5.
• Xiao, Di., Abuishmais, Ibrahim and Undeland, Tore Marvin. "Switching Characteristics of NPT-IGBT Power Module at Different Temperatures". Proceedings of the 14th International Power Electronics and Motion Control Conference, EPE-PEMC 2010. IEEE conference proceedings 2010, ISBN 978-1-4244-7854-5.
• Abuishmais, Ibrahim., and Undeland, Tore Marvin. "Simplified Models of Forward Conduction for SiC Power PiN and Schottky Diodes with Temperature Dependency." 5th IET International Conference on Power Electronics, Machines and Drives (PEMD 2010). IEEE Press 2010 ISBN 978-1-84919-231-6.
• Abuishmais, Ibrahim., Arshad, Waqas M. and Kanerva, Sami. "Analysis of VSI-DTC Fed 6-phase Synchronous Machines". 13th International Power Electronics and Motion Control Conference. Poznan, Poland: IEEE / EPEPEMC2008 2008, ISBN 978-1-4244-1742-1.